PART |
Description |
Maker |
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
AOT10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
AOD2C60 |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
AOI538 |
Trench Power AlphaMOS (αMOS LV) technology
|
TY Semiconductor Co., Ltd
|
IRF7241PBF IRF7241PBF-15 |
Trench Technology HEXFET Power MOSFET
|
International Rectifier
|
STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP7401 STP7401S32RG |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|